WIDE-BAND, LOW-NOISE, MATCHED-IMPEDANCE AMPLIFIERS IN SUBMICROMETER MOS TECHNOLOGY

被引：3

作者：

TOH, KY

MEYER, RG

SOO, DC

CHIN, GM

VOSHCHENKOV, AM

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] AT&T BELL LABS,DEPT HIGH SPEED ELECTR RES,HOLMDEL,NJ 07733

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1987年 / 22卷 / 06期

关键词：

D O I：

10.1109/JSSC.1987.1052852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

INTEGRATED CIRCUITS, VLSI

引用

页码：1031 / 1040

页数：10

共 10 条

[1]

CARSON RS, 1975, HIGH FREQUENCY AMPLI, pCH6

[2]

CHERRY EM, 1968, AMPLIFYING DEVICES L

[3]

EDWARDS TC, 1981, FDN MICROSTRIP CIRCU, pCH3

[4]

HA TT, 1981, SOLID STATE MICROWAV, pCH2

[5] HOT-ELECTRON EFFECTS ON CHANNEL THERMAL NOISE IN FINE-LINE NMOS FIELD-EFFECT TRANSISTORS [J].

JINDAL, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (09) :1395-1397

[6]

KO PK, 1985, IEDM, V83, P751

[7] THE MATCHED FEEDBACK-AMPLIFIER - ULTRAWIDE-BAND MICROWAVE AMPLIFICATION WITH GAAS-MESFETS [J].

NICLAS, KB ;

WILSER, WT ;

GOLD, RB ;

HITCHENS, WR .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (04) :285-294

[8] A LONG-WAVELENGTH OPTICAL RECEIVER USING A SHORT-CHANNEL SI-MOSFET [J].

OGAWA, K ;

OWEN, B ;

BOLL, HJ .

BELL SYSTEM TECHNICAL JOURNAL, 1983, 62 (05) :1181-1188

[9]

Park H. J., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P40

[10]

Park Helen, COMMUNICATION

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