HIGH-POWER HIGH-EFFICIENCY LP-MOCVD INP GUNN-DIODES FOR 94 GHZ

被引：18

作者：

DIFORTEPOISSON, MA

BRYLINSKI, C

COLOMER, G

OSSELIN, D

HERSEE, S

DUCHEMIN, JP

AZAN, F

LECHEVALLIER, D

LACOMBE, J

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 25-2期

关键词：

D O I：

10.1049/el:19840725

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1061 / 1062

页数：2

共 6 条

[1]

CORLETT R, 1975, I PHYS C SERIES, V24, pCH2

[2] HIGH-EFFICIENCY 90-GHZ INP GUNN OSCILLATORS [J].

CROWLEY, JD ;

SOWERS, JJ ;

JANIS, BA ;

FANK, FB .

ELECTRONICS LETTERS, 1980, 16 (18) :705-706

[3]

DIFORTEPOISSON MA, UNPUB APPL PHYS LETT

[4]

FANK FB, 1984, HIGH EFFICIENCY INP

[5] OPTIMUM DESIGN OF N+-N-N+ INP DEVICES IN THE MILLIMETER-RANGE FREQUENCY LIMITATION - RF PERFORMANCES [J].

FRISCOURT, MR ;

ROLLAND, PA .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (05) :135-137

[6] INP GUNN-EFFECT DEVICES FOR MILLIMETER-WAVE AMPLIFIERS AND OSCILLATORS [J].

HAMILTON, RJ ;

FAIRMAN, RD ;

LONG, SI ;

OMORI, M ;

FANK, FB .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (11) :775-780

← 1 →