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MEASUREMENT OF INTRINSIC GATE CAPACITANCES OF SOI MOSFETS
被引:7
作者
:
FLANDRE, D
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
FLANDRE, D
[
1
]
VANDEWIELE, F
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
VANDEWIELE, F
[
1
]
JESPERS, PGA
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
JESPERS, PGA
[
1
]
HAOND, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
HAOND, M
[
1
]
机构
:
[1]
CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1990年
/ 11卷
/ 07期
关键词
:
D O I
:
10.1109/55.56478
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
Results of the measurement of intrinsic gate capacitances of SOI MOSFET's are described for the first time and are shown to provide valuable information for characterization purposes as well as to cast some light on the small- and large-signal modeling of SOI MOSFET's. © 1990 IEEE
引用
收藏
页码:291 / 293
页数:3
相关论文
共 6 条
[1]
STATIC AND DYNAMIC TRANSCONDUCTANCE MODEL FOR DEPLETION-MODE TRANSISTORS - A NEW CHARACTERIZATION METHOD FOR SILICON-ON-INSULATOR MATERIALS
HADDARA, H
论文数:
0
引用数:
0
h-index:
0
HADDARA, H
ELEWA, T
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0
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0
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0
ELEWA, T
CRISTOLOVEANU, S
论文数:
0
引用数:
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0
CRISTOLOVEANU, S
[J].
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(01)
: 35
-
37
[2]
CMOS devices and circuits made in lamp-ZMR SOI films
Haond, M.
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0
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0
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CNET, France
CNET, France
Haond, M.
Dutartre, D.
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CNET, France
CNET, France
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Bensahel, D.
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0
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0
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CNET, France
CNET, France
Bensahel, D.
Monroy-Aguirre, A.
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0
引用数:
0
h-index:
0
机构:
CNET, France
CNET, France
Monroy-Aguirre, A.
Thouret, S.
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CNET, France
Thouret, S.
Chapuis, D.
论文数:
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引用数:
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CNET, France
CNET, France
Chapuis, D.
[J].
Microelectronic Engineering,
1988,
8
(3-4)
: 201
-
218
[3]
HAOND M, 1989, 19TH P ESSDERC, P893
[4]
Nicollian E. H., 1982, METAL OXIDE SEMICOND
[5]
TRANSIENT EFFECT IN THINNED SILICON-ON-INSULATOR DEVICES
VU, DP
论文数:
0
引用数:
0
h-index:
0
机构:
CNET, Meylan, Fr, CNET, Meylan, Fr
VU, DP
[J].
ELECTRONICS LETTERS,
1986,
22
(08)
: 412
-
413
[6]
A DIRECT MEASUREMENT TECHNIQUE FOR SMALL GEOMETRY MOS-TRANSISTOR CAPACITANCES
WENG, KCK
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0
引用数:
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h-index:
0
WENG, KCK
YANG, P
论文数:
0
引用数:
0
h-index:
0
YANG, P
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(01)
: 40
-
42
←
1
→
共 6 条
[1]
STATIC AND DYNAMIC TRANSCONDUCTANCE MODEL FOR DEPLETION-MODE TRANSISTORS - A NEW CHARACTERIZATION METHOD FOR SILICON-ON-INSULATOR MATERIALS
HADDARA, H
论文数:
0
引用数:
0
h-index:
0
HADDARA, H
ELEWA, T
论文数:
0
引用数:
0
h-index:
0
ELEWA, T
CRISTOLOVEANU, S
论文数:
0
引用数:
0
h-index:
0
CRISTOLOVEANU, S
[J].
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(01)
: 35
-
37
[2]
CMOS devices and circuits made in lamp-ZMR SOI films
Haond, M.
论文数:
0
引用数:
0
h-index:
0
机构:
CNET, France
CNET, France
Haond, M.
Dutartre, D.
论文数:
0
引用数:
0
h-index:
0
机构:
CNET, France
CNET, France
Dutartre, D.
Bensahel, D.
论文数:
0
引用数:
0
h-index:
0
机构:
CNET, France
CNET, France
Bensahel, D.
Monroy-Aguirre, A.
论文数:
0
引用数:
0
h-index:
0
机构:
CNET, France
CNET, France
Monroy-Aguirre, A.
Thouret, S.
论文数:
0
引用数:
0
h-index:
0
机构:
CNET, France
CNET, France
Thouret, S.
Chapuis, D.
论文数:
0
引用数:
0
h-index:
0
机构:
CNET, France
CNET, France
Chapuis, D.
[J].
Microelectronic Engineering,
1988,
8
(3-4)
: 201
-
218
[3]
HAOND M, 1989, 19TH P ESSDERC, P893
[4]
Nicollian E. H., 1982, METAL OXIDE SEMICOND
[5]
TRANSIENT EFFECT IN THINNED SILICON-ON-INSULATOR DEVICES
VU, DP
论文数:
0
引用数:
0
h-index:
0
机构:
CNET, Meylan, Fr, CNET, Meylan, Fr
VU, DP
[J].
ELECTRONICS LETTERS,
1986,
22
(08)
: 412
-
413
[6]
A DIRECT MEASUREMENT TECHNIQUE FOR SMALL GEOMETRY MOS-TRANSISTOR CAPACITANCES
WENG, KCK
论文数:
0
引用数:
0
h-index:
0
WENG, KCK
YANG, P
论文数:
0
引用数:
0
h-index:
0
YANG, P
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(01)
: 40
-
42
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1
→