TRANSIENT EFFECT IN THINNED SILICON-ON-INSULATOR DEVICES

被引：1

作者：

VU, DP

机构：

[1] CNET, Meylan, Fr, CNET, Meylan, Fr

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 08期

关键词：

SEMICONDUCTOR DEVICE MANUFACTURE;

D O I：

10.1049/el:19860281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In thin-film silicon-on-insulator devices, electrostatic coupling between the two Si-SiO//2 interfaces gives rise to transient drain-source current. This effect should be considered in devising three-dimensional circuits.

引用

页码：412 / 413

页数：2

共 11 条

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[3]

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[10]

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