ELECTRON-INDUCED ETCHING OF SILICON BY SF6

被引：10

作者：

OOSTRA, DJ

HARING, A

DEVRIES, AE

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 16卷 / 4-5期

关键词：

D O I：

10.1016/0168-583X(86)90097-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：364 / 368

页数：5

共 18 条

[1]

CALCAGNO L, UNPUB

[2] LASER-INDUCED GAS-SURFACE INTERACTIONS [J].

Chuang, T. J. .

SURFACE SCIENCE REPORTS, 1983, 3 (01) :1-105

[3] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[4] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3189-3196

[5] MAGNETICALLY SUSPENDED CROSS-CORRELATION CHOPPER IN MOLECULAR BEAM-SURFACE EXPERIMENTS [J].

COMSA, G ;

DAVID, R ;

SCHUMACHER, BJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (06) :789-797

[6]

DIELEMAN J, 1984, SOLID STATE TECHNOL, V27, P191

[7] PLASMA CHEMICAL PHYSICS IN THE ELECTRONICS INDUSTRY [J].

DIELEMAN, J .

THIN SOLID FILMS, 1981, 86 (2-3) :147-164

[8]

ELLEGAARD O, UNPUB

[9] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J].

FLAMM, DL ;

DONNELLY, VM ;

IBBOTSON, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :23-30

[10]

FONASH SJ, 1985, SOLID STATE TECHNOL, V28, P201

← 1 2 →