COMMENSURATE AND INCOMMENSURATE PHASES AT RECONSTRUCTED (IN,GA)AS(001) SURFACES - X-RAY-DIFFRACTION EVIDENCE FOR A COMPOSITION LOCK-IN

被引：45

作者：

SAUVAGESIMKIN, M

GARREAU, Y

PINCHAUX, R

VERON, MB

LANDESMAN, JP

NAGLE, J

机构：

[1] THOMSON CSF,CENT RECH LAB,F-91404 ORSAY,FRANCE

[2] UNIV PARIS 06,CNRS,MINERAL CRISTALLOG LAB,F-75252 PARIS 05,FRANCE

[3] UNIV D DIDEROT,CNRS,MINERAL CRISTALLOG LAB,F-75252 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.75.3485

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Surface chemical ordering of group III elements in the ternary alloy InxGa1-xAs, stabilizing the 2 X 3 reconstruction at the surface composition In0.67Ga0.33As, is demonstrated on the basis of x-ray diffraction data. An incommensurate 2 X n reconstruction is observed for lower In surface concentrations, achieved by burying an InAs monolayer under a number of GaAs layers and letting the In surface segregation process operate. A quantitative account of the intensity measured in the incommensurate phase is obtained by using a probabilistic distribution of Ga- and In-rich structural elements.

引用

收藏

页码：3485 / 3488

页数：4

相关论文

共 18 条

[1] THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES [J].

AVERY, AR ;

HOLMES, DM ;

SUDIJONO, J ;

JONES, TS ;

JOYCE, BA .

SURFACE SCIENCE, 1995, 323 (1-2) :91-101

[2] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[3] FORMATION AND MORPHOLOGY OF INAS/GAAS HETEROINTERFACES [J].

BRANDT, O ;

PLOOG, K ;

TAPFER, L ;

HOHENSTEIN, M ;

BIERWOLF, R ;

PHILLIPP, F .

PHYSICAL REVIEW B, 1992, 45 (15) :8443-8453

[4]

CAVANNA A, 1993, THESIS U PARIS

[5] ULTRAHIGH-VACUUM 4-CIRCLE DIFFRACTOMETER FOR GRAZING-INCIDENCE X-RAY-DIFFRACTION ON INSITU MBE GROWN-III-V SEMICONDUCTOR SURFACES [J].

CLAVERIE, P ;

MASSIES, J ;

PINCHAUX, R ;

SAUVAGESIMKIN, M ;

FROUIN, J ;

BONNET, J ;

JEDRECY, N .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (07) :2369-2372

[6]

GARREAU Y, IN PRESS

[7] MONOLAYER-SCALE OPTICAL INVESTIGATION OF SEGREGATION EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES [J].

GERARD, JM ;

MARZIN, JY .

PHYSICAL REVIEW B, 1992, 45 (11) :6313-6316

[8] OBSERVATION OF A NEW ORDERED PHASE IN ALXIN1-XAS ALLOY AND RELATION BETWEEN ORDERING STRUCTURE AND SURFACE RECONSTRUCTION DURING MOLECULAR-BEAM-EPITAXIAL GROWTH [J].

GOMYO, A ;

MAKITA, K ;

HINO, I ;

SUZUKI, T .

PHYSICAL REVIEW LETTERS, 1994, 72 (05) :673-676

[9] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS [J].

MARZIN, JY ;

GERARD, JM ;

IZRAEL, A ;

BARRIER, D ;

BASTARD, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (05) :716-719

[10] COMMENSURATE AND INCOMMENSURATE PHASE-TRANSITIONS OF THE (001) INAS SURFACE UNDER CHANGES OF BULK LATTICE-CONSTANT, AS CHEMICAL-POTENTIAL, AND TEMPERATURE [J].

MOISON, JM ;

GUILLE, C ;

BENSOUSSAN, M .

PHYSICAL REVIEW LETTERS, 1987, 58 (24) :2555-2558