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ELECTRONIC-PROPERTIES OF TWIN BOUNDARIES AND TWINNING SUPERLATTICES IN DIAMOND-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS

被引：101
作者：
IKONIC, Z
SRIVASTAVA, GP
INKSON, JC
机构：
[1] Department of Physics, Exeter University, Exeter EX4 4QL, Stocker Road
来源：
PHYSICAL REVIEW B | 1993年 / 48卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.48.17181
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic properties of twinning boundaries, stacking faults, and a recently proposed structure, the twinning superlattice, in group IV and III-V diamond-type and zinc-blende-type semiconductors are calculated and discussed.
引用
收藏
页码：17181 / 17193
页数：13
相关论文
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