共 11 条
- [1] BUSTARRET E, 1982, 16TH P INT C PHYS SE
- [2] BUSTARRET E, 1983, J NON-CRYST, V59
- [3] DENEUVILLE A, 1981, 9TH P INT C AM LIQ S, P733
- [4] LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1084 - 1086
- [6] RANCHOUX B, 1983, J NON-CRYST, V59
- [7] ELECTRONIC-PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW-DISCHARGE PLASMA [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 257 - 260
- [8] PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW-DISCHARGE SI-H FILMS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 265 - 268
- [9] PROPERTIES OF POLYCRYSTALLINE SILICON PREPARED BY CHEMICAL-TRANSPORT IN HYDROGEN PLASMA AT TEMPERATURES BETWEEN 80-DEGREES-C AND 400-DEGREES-C [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (03): : 295 - 308