REALIZATION AND WAFER TEST OF INGAASP/INP DFB LASER MONITOR OEICS

被引：3

作者：

DUTTING, K

IDLER, W

BOUAYADAMINE, J

MAYER, HP

WUNSTEL, K

机构：

[1] SEL-ALCATEL, Research Centre, Optoelectronic Components Division, 7000

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 03期

关键词：

D O I：

10.1109/68.122382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wafer-testable DFB lasers and monolithically integrated monitor diodes are realized to replace the time consuming and expensive single-chip test procedure in semiconductor laser fabrication process. Laser-end facets and integrated monitor diodes are defined on 1.5-mu-m InGaAsP/InP MQW DFB laser wafers by reactive ion beam etching (RIBE). Using terminal electrical noise (TEN) measurement the lasers are characterized directly on the wafer with respect to threshold current and single mode operation. Threshold currents down to 10 mA have been achieved for the integrated devices.

引用

页码：250 / 252

页数：3

共 10 条

[1]

ANDREKSON PA, P IOOC ECOC 85, P733

[2]

BOUADMA N, 1989, P IOOC 89

[3]

IDLER W, P ECOC 88, P380

[4]

IDLER W, 1990, P ITG FACHTAGUNG HET, P183

[5] GAINASP-INP MASS-TRANSPORT LASER MONOLITHICALLY INTEGRATED WITH PHOTODETECTOR USING REACTIVE ION ETCHING [J].

MATSUI, T ;

SUGIMOTO, H ;

OHTSUKA, K ;

ABE, Y ;

OGATA, H .

ELECTRONICS LETTERS, 1989, 25 (15) :954-956

[6] GAINASP-INP LASERS WITH MONOLITHICALLY INTEGRATED MONITORING PHOTODIODES FABRICATED BY INCLINED REACTIVE ION ETCHING [J].

SAITO, H ;

NOGUCHI, Y .

ELECTRONICS LETTERS, 1989, 25 (11) :719-720

[7] 10 GBIT/S MQW-DFB-SIBH LASERS ENTIRELY GROWN BY LPMOVPE [J].

SPEIER, P ;

BOUAYADAMINE, J ;

CEBULLA, U ;

DUTTING, K ;

KLENK, M ;

LAUBE, G ;

MAYER, HP ;

WEINMANN, R ;

WUNSTEL, K ;

ZIELINSKI, E ;

HILDEBRAND, O .

ELECTRONICS LETTERS, 1991, 27 (10) :863-864

[8] INGAASP/INP LASERS WITH 2 REACTIVE-ION-ETCHED MIRROR FACETS [J].

VANGURP, GJ ;

JACOBS, JM ;

BINSMA, JJM ;

TIEMEIJER, LF .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07) :L1236-L1238

[9] FULL-WAFER TECHNOLOGY - A NEW APPROACH TO LARGE-SCALE LASER FABRICATION AND INTEGRATION [J].

VETTIGER, P ;

BENEDICT, MK ;

BONA, GL ;

BUCHMANN, P ;

CAHOON, EC ;

DATWYLER, K ;

DIETRICH, HP ;

MOSER, A ;

SEITZ, HK ;

VOEGELI, O ;

WEBB, DJ ;

WOLF, P .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1319-1331

[10]

WUNSTEL K, P IPAT 87, P290

← 1 →