GAINASP-INP MASS-TRANSPORT LASER MONOLITHICALLY INTEGRATED WITH PHOTODETECTOR USING REACTIVE ION ETCHING

被引：14

作者：

MATSUI, T

SUGIMOTO, H

OHTSUKA, K

ABE, Y

OGATA, H

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 15期

关键词：

D O I：

10.1049/el:19890639

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：954 / 956

页数：3

共 9 条

[1] GAAS ALGAAS RIDGE WAVE-GUIDE LASER MONOLITHICALLY INTEGRATED WITH A PHOTODETECTOR USING ION-BEAM ETCHING [J].

BOUADMA, N ;

GROSMAIRE, S ;

BRILLOUET, F .

ELECTRONICS LETTERS, 1987, 23 (16) :855-857

[2] FABRICATION AND CHARACTERISTICS OF ION-BEAM ETCHED CAVITY INP/INGAASP BH LASERS [J].

BOUADMA, N ;

HOGREL, JF ;

CHARIL, J ;

CARRE, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :909-914

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

[4] NOVEL PROCESS FOR INTEGRATION OF OPTOELECTRONIC DEVICES USING REACTIVE ION ETCHING WITHOUT CHLORINATED GAS [J].

HENRY, L ;

VAUDRY, C ;

GRANJOUX, P .

ELECTRONICS LETTERS, 1987, 23 (24) :1253-1254

[5] REACTIVE ION ETCHING OF III-V-COMPOUNDS USING C2H6/H2 [J].

MATSUI, T ;

SUGIMOTO, H ;

OHISHI, T ;

OGATA, H .

ELECTRONICS LETTERS, 1988, 24 (13) :798-800

[6] GAINASP-INP LASERS WITH ETCHED MIRRORS BY REACTIVE ION ETCHING USING A MIXTURE OF ETHANE AND HYDROGEN [J].

MATSUI, T ;

SUGIMOTO, H ;

OHISHI, T ;

ABE, Y ;

OHTSUKA, K ;

OGATA, H .

APPLIED PHYSICS LETTERS, 1989, 54 (13) :1193-1194

[7] CW OPERATION OF 1.5-MU-M GAINASP-INP BURIED-HETEROSTRUCTURE LASER WITH A REACTIVE-ION-ETCHED FACET [J].

MIKAMI, O ;

AKIYA, H ;

SAITOH, T ;

NAKAGOME, H .

ELECTRONICS LETTERS, 1983, 19 (06) :213-215

[8]

Niggebrugge U., 1985, I PHYS C SER, V79, P367

[9] CW OPERATION OF 1.5-MU-M INGAASP/INP BH LASERS WITH A REACTIVE-ION-ETCHED FACET [J].

SAITO, H ;

NOGUCHI, Y ;

NAGAI, H .

ELECTRONICS LETTERS, 1985, 21 (17) :748-749

← 1 →