GAINASP-INP LASERS WITH ETCHED MIRRORS BY REACTIVE ION ETCHING USING A MIXTURE OF ETHANE AND HYDROGEN

被引：34

作者：

MATSUI, T

SUGIMOTO, H

OHISHI, T

ABE, Y

OHTSUKA, K

OGATA, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 13期

关键词：

D O I：

10.1063/1.100749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1193 / 1194

页数：2

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[10] CW OPERATION OF 1.5-MU-M GAINASP-INP BURIED-HETEROSTRUCTURE LASER WITH A REACTIVE-ION-ETCHED FACET [J].

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