GAS SOURCE MBE GROWTH OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A CARBON DOPED BASE USING ONLY GASEOUS SOURCES

被引：14

作者：

SANDHU, A

FUJII, T

ANDO, H

TAKAHASHI, T

ISHIKAWA, H

OKAMOTO, N

YOKOYAMA, N

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 03期

关键词：

GSMBE; CBE; MOMBE; CARBON; DISILANE; TRIMETHYLGALLIUM; HBT;

D O I：

10.1143/JJAP.30.464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the first growth of a GaAs/Al0.2Ga0.8As heterojunction bipolar transistor by gas source MBE using only gaseous sources. The p-type GaAs base layer was carbon doped using trimethylgallium (p = 4 x 10(19) cm-3) and the n-type Al0.2Ga0.8As emitter layer was silicon doped (n = 9 x 10(17) cm-3) using uncracked disilane. A dc current gain of 40 was obtained at a current density of 50 A/cm2.

引用

页码：464 / 465

页数：2

共 6 条

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