DOPING CHARACTERISTICS OF GAS-SOURCE MBE-GROWN NORMAL-ALXGA1-XAS (X=0-0.28) DOPED USING DISILANE

被引：6

作者：

FUJII, T

SANDHU, A

ANDO, H

KATAOKA, Y

ISHIKAWA, H

机构：

[1] Fujitsu Laboratories Ltd., Atsugi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 11期

关键词：

DISILANE; SI; DOPING; GAS-SOURCE MBE; GAAS; ALGAAS; TRIETHYL GALLIUM; TRIETHYL ALUMINUM; ARSINE;

D O I：

10.1143/JJAP.29.2386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si doping using uncracked disilane (Si2H6) in gas-source molecular beam epitaxy of n-Al(x)Ga(1-x)As (x = 0-0.28) using triethyl gallium, triethyl aluminum, and arsine was studied in a carrier concentration from 5 x 10(17) to 2 x 10(18) cm-3. We found that (1) the Si atomic concentration of AlGaAs is proportional to the Si2H6 flow rate, and decreases with increasing Al content at a constant Si2H6 flow rate, and (2) the carrier concentration of AlGaAs shows a square-root dependence on the Si atomic concentration incorporated.

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页码：2386 / 2387

页数：2

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