A STUDY OF COLD DOPANT SOURCES FOR GAS SOURCE MBE - THE USE OF DISILANE AS AN N-TYPE DOPANT OF ALXGA1-XAS (X=0-0.28) AND TRIMETHYLGALLIUM AS A P-TYPE DOPANT OF GAAS

Disilane (Si2H6) was shown to be a suitable n-type gaseous dopant source for the gas source MBE (GSMBE) growth of AlxGa1-xAs (x=0–0.28) using arsine, triethylgallium and triethylaluminium as host material sources. The carrier concentration of the AlxGa1-xAs epilayer was controlled between 5×1017–2×1018 cm-3 (x=0–0.28) by varying the Si2H6 flow rate from 0.3 to 10 sccm. Furthermore, the hole concentration of GaAs grown using trimethylgallium as both the dopant and also the host material source, was controlled from 1.3×1020 to 6.3×1018 cm-3 by varying the V/III ratio from 0.5 to 6.5. © 1990 The Japan Society of Applied Physics.