GROWTH-MECHANISM AND DEFECTS IN SIC PREPARED BY SUBLIMATION METHOD

被引：38

作者：

NISHINO, S

HIGASHINO, T

TANAKA, T

SARAIE, J

机构：

[1] Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Kyoto

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 147卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(94)00658-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A 6H-SiC bulk crystal was grown by a sublimation method. We have studied the surface morphology of the grown layer and considered the growth mechanism by observing the surface morphology. In this paper, the growth mechanism and defect formation are discussed.

引用

页码：339 / 342

页数：4

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