LARGE SPONTANEOUS NUCLEATION RATE IN IMPLANTED POLYCRYSTALLINE SILICON FILMS ON SIO2

被引：10

作者：

IVERSON, RB

REIF, R

机构：

来源：

MATERIALS LETTERS | 1987年 / 5卷 / 10期

关键词：

D O I：

10.1016/0167-577X(87)90047-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：393 / 395

页数：3

共 16 条

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[6] STOCHASTIC-MODEL FOR GRAIN-SIZE VERSUS DOSE IN IMPLANTED AND ANNEALED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J].

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[10] THE EFFECT OF GERMANIUM ION-IMPLANTATION DOSE ON THE AMORPHIZATION AND RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON FILMS [J].

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