THE EFFECT OF GERMANIUM ION-IMPLANTATION DOSE ON THE AMORPHIZATION AND RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON FILMS

被引：14

作者：

KOMEM, Y ^{[1
]}

HALL, IW ^{[1
]}

机构：

[1] TECHNION,INST SOLID STATE,HAIFA 32000,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.328658

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6655 / 6658

页数：4

共 14 条

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BACCARANI, G ;

RICCO, B ;

SPADINI, G .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5565-5570

[2]

Baranova E. C., 1973, ION IMPLANTATION SEM, P59

[3] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J].

BEAN, JC ;

LEAMY, HJ ;

POATE, JM ;

ROZGONYI, GA ;

SHENG, TT ;

WILLIAMS, JS ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :227-230

[4] EXACT ANALYSIS OF THE CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS [J].

BOARD, K ;

DARWISH, M .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4546-4547

[5]

CERNOV AP, 1963, KRISTALLOGRAFIYA, V8, P87

[6] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J].

DROSD, B ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4106-4110

[7] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY ND-YAG LASER-HEATING [J].

FAN, JCC ;

ZEIGER, HJ .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :224-226

[8] THEORY OF THE ELECTRICAL AND PHOTO-VOLTAIC PROPERTIES OF POLYCRYSTALLINE SILICON [J].

GHOSH, AK ;

FISHMAN, C ;

FENG, T .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :446-454

[9]

KLANA M, 1968, 2ND P INT C CRYST GR, P188

[10]

LEONG JY, 1979, J APPL PHYS, V58, P5345

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