THE EFFECT OF GERMANIUM ION-IMPLANTATION DOSE ON THE AMORPHIZATION AND RECRYSTALLIZATION OF POLYCRYSTALLINE SILICON FILMS

被引:14
作者
KOMEM, Y [1 ]
HALL, IW [1 ]
机构
[1] TECHNION,INST SOLID STATE,HAIFA 32000,ISRAEL
关键词
D O I
10.1063/1.328658
中图分类号
O59 [应用物理学];
学科分类号
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页码:6655 / 6658
页数:4
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[13]  
SMITH B, 1977, ION IMPLANTATION RAN
[14]   CRYSTALLIZATION IN AMORPHOUS-SILICON [J].
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