BREAKDOWN VOLTAGE ENHANCEMENT FROM CHANNEL QUANTIZATION IN INALAS/N+-INGAAS HFETS

被引：33

作者：

BAHL, SR

DELALAMO, JA

机构：

[1] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA.

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 02期

关键词：

D O I：

10.1109/55.144979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.52Al0.48As/n+-In0.53Ga0.47As HFET's have been fabricated with different channel thicknesses. We show that by reducing the channel thickness from 350 to 100 angstrom the reverse gate breakdown voltage improves from 9 to 19 V. We partially attribute this to the increased effective bandgap that results from energy quantization in the channel. This bandgap enhancement is directly confirmed by photoluminescence (PL) measurements on the same heterostructures. Channel quantization emerges as a promising approach for exploiting the excellent transport properties of InGaAs with high InAs mole fraction. The principle behind our work should be applicable to other narrow-gap semiconductors.

引用

页码：123 / 125

页数：3

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