TRANSITION FROM 2 TO 3 DIMENSIONS IN HOMOEPITAXIAL THIN-FILM GROWTH - THE EFFECT OF A REPULSIVE BARRIER AT DESCENDING STEPS

被引：8

作者：

FERRON, J

机构：

[1] Instituto de Desarrollo Tecnolgico para la Industria Química, Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina), Universidad Nacional del Litoral, 3000 Santa Fe

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.46.10457

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Through Monte Carlo simulation we have studied the effect of a repulsive barrier at descending steps in the evolution of the island perimeter during epitaxial film growth. We found that the effect of including such a barrier, together with a restriction to the columnar growth, is the extinction of the perimeter oscillation during the film growth at an intermediate temperature, with an oscillating regime for lower and higher temperatures.

引用

页码：10457 / 10459

页数：3

共 12 条

[1] QUANTITATIVE-EVALUATION OF THE PERFECTION OF AN EPITAXIAL FILM GROWN BY VAPOR-DEPOSITION AS DETERMINED BY THERMAL-ENERGY ATOM SCATTERING [J].

DEMIGUEL, JJ ;

CEBOLLADA, A ;

GALLEGO, JM ;

FERRON, J ;

FERRER, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 88 (04) :442-454

[2] MONTE-CARLO SIMULATION OF THE GROWTH OF A CU(100) SURFACE FROM ITS OWN VAPOR - ISLAND NUCLEATION AND STEP PROPAGATION GROWTH MODES [J].

DEMIGUEL, JJ ;

FERRON, J ;

CEBOLLADA, A ;

GALLEGO, JM ;

FERRER, S .

JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) :481-489

[3]

EGELHOFF WF, 1989, PHYS REV LETT, V62, P621

[4] EPITAXIAL-GROWTH OF METALS - EXPERIMENTAL RESULTS AND MONTE-CARLO SIMULATION [J].

FERRON, J ;

GALLEGO, JM ;

CEBOLLADA, A ;

DEMIGUEL, JJ ;

FERRER, S .

SURFACE SCIENCE, 1989, 211 (1-3) :797-803

[5] HE SCATTERING STUDY OF THE NUCLEATION AND GROWTH OF CU(100) FROM ITS VAPOR [J].

GOMEZ, LJ ;

BOURGEAL, S ;

IBANEZ, J ;

SALMERON, M .

PHYSICAL REVIEW B, 1985, 31 (04) :2551-2553

[6]

Goodman F. O., 1976, DYNAMICS GAS SURFACE

[7]

KAZIOL C, 1987, APPL PHYS LETT, V51, P901

[8] REENTRANT LAYER-BY-LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF METAL-ON-METAL SUBSTRATES [J].

KUNKEL, R ;

POELSEMA, B ;

VERHEIJ, LK ;

COMSA, G .

PHYSICAL REVIEW LETTERS, 1990, 65 (06) :733-736

[9]

LAPOUJOULADE J, 1981, SURF SCI, V108, P526

[10] DYNAMICS OF FILM GROWTH OF GAAS BY MBE FROM RHEED OBSERVATIONS [J].

NEAVE, JH ;

JOYCE, BA ;

DOBSON, PJ ;

NORTON, N .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (01) :1-8

← 1 2 →