DEEP LEVEL CHARACTERIZATION IN SEMI-INSULATING LEC GALLIUM-ARSENIDE

被引：5

作者：

FORNARI, R ^{[1
]}

DOZSA, L ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1361 BUDAPEST 5,HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 105卷 / 02期

关键词：

D O I：

10.1002/pssa.2211050225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：521 / 530

页数：10

共 20 条

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[9] INFLUENCE OF MELT COMPOSITION ON THE LONGITUDINAL DISTRIBUTION OF MIDGAP NATIVE DONOR CONCENTRATION IN SEMIINSULATING LIQUID-ENCAPSULATED CZOCHRALSKI GAAS CRYSTAL [J].

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[10] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS [J].

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