BONDING OF ANTIMONY ON GAAS(110) - A PROTOTYPICAL SYSTEM FOR ADSORPTION OF COLUMN-V ELEMENTS ON III-V COMPOUNDS

被引:94
作者
SKEATH, P [1 ]
SU, CY [1 ]
HARRISON, WA [1 ]
LINDAU, I [1 ]
SPICER, WE [1 ]
机构
[1] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
来源
PHYSICAL REVIEW B | 1983年 / 27卷 / 10期
关键词
D O I
10.1103/PhysRevB.27.6246
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6246 / 6262
页数:17
相关论文
共 34 条
[1]  
[Anonymous], ELECTRONIC STRUCTURE
[2]   SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE [J].
BACHRACH, RZ .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :115-144
[3]   LEED-AES-TDS CHARACTERIZATION OF SB OVERLAYERS ON GAAS(110) [J].
CARELLI, J ;
KAHN, A .
SURFACE SCIENCE, 1982, 116 (02) :380-390
[5]   SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J].
CHELIKOWSKY, JR ;
LOUIE, SG ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1976, 20 (07) :641-644
[6]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[7]   SYNCHROTRON RADIATION AS A NEW TOOL WITHIN PHOTON-BEAM TECHNOLOGY [J].
DONIACH, S ;
LINDAU, I ;
SPICER, WE ;
WINICK, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1123-1127
[8]   DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].
DUKE, CB ;
PATON, A ;
FORD, WK ;
KAHN, A ;
CARELLI, J .
PHYSICAL REVIEW B, 1982, 26 (02) :803-814
[9]  
EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[10]  
GODDARD W, COMMUNICATION