LOW-ENERGY PROTON-BEAM LITHOGRAPHY WITH A THIN OXYGEN-ETCH BARRIER LAYER

被引：4

作者：

HIRAOKA, H

机构：

来源：

关键词：

D O I：

10.1149/1.2115446

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2938 / 2944

页数：7

共 13 条

[1] DRY DEVELOPMENT OF ION-BEAM EXPOSED PMMA RESIST
ADESIDA, I
CHINN, JD
RATHBUN, L
WOLF, ED
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 666 - 671
[2] BHLEN H, 1982, IBM J RES DEV, V26, P568
[3] COBURN JW, 1983, APPLICATIONS PIEZOEL, P221
[4] Duran J., 1977, IBM Technical Disclosure Bulletin, V20
[5] SOLIDIFICATION-FRONT MODULATION TO ENTRAIN SUBBOUNDARIES IN ZONE-MELTING RECRYSTALLIZATION OF SI ON SIO2
GEIS, MW
SMITH, HI
SILVERSMITH, DJ
MOUNTAIN, RW
THOMPSON, CV
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) : 1178 - 1183
[6] RADIATION-CHEMISTRY OF POLY(METHACRYLATES)
HIRAOKA, H
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (02) : 121 - 130
[7] ION-BEAM EXPOSURE PROFILES IN PMMA-COMPUTER SIMULATION
KARAPIPERIS, L
ADESIDA, I
LEE, CA
WOLF, ED
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1259 - 1263
[8] KUWANO H, 1980, JPN J APPL PHYS, V19, pL619
[9] KYSER DF, 1980, J VAC SCI TECHNOL, V16, P1959
[10] PARIK M, 1978, J VAC SCI TECHNOL, V15, P927