PHOTOLUMINESCENCE OF OMVPE GROWN ALGAAS - THE EFFECT OF COMPOSITION, DOPING AND THE SUBSTRATE

被引：8

作者：

SHEALY, JR ^{[1
]}

SCHAUS, CF ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] GE,CTR DISCRETE SEMICOND DEVICE,SYRACUSE,NY 13201

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90430-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：305 / 310

页数：6

共 13 条

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[7]

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[8] PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN EPITAXIAL ALXGA1-XAS [J].

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[9] PHOTO-LUMINESCENCE STUDY OF ACCEPTORS IN ALXGA1-XAS [J].

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[10]

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