OPTIMIZATION OF INTERFACE PARAMETERS AND BULK PROPERTIES IN ZNSE-GAAS HETEROSTRUCTURES

被引：32

作者：

BONANNI, A

VANZETTI, L

SORBA, L

FRANCIOSI, A

LOMASCOLO, M

PRETE, P

CINGOLANI, R

机构：

[1] IST FIS MAT,TECNOL AVANZATE SUPERFICI & CATALISI LAB,AREA RIC TRIESTE,I-34012 TRIESTE,ITALY

[2] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

[3] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY

[4] CNR,IST ICMAT,ROME,ITALY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.113582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The flux parameters employed during molecular beam epitaxy of ZnSe on GaAs control both the heterojunction band alignment and the optical quality of the II-VI wide-gap layer. Independent optimization of the band discontinuities and ZnSe optical properties was achieved by fabricating a 2-nm-thick interface layer in nonstoichiometric conditions to control the band alignment, followed by the optically active layer in near-stoichiometric conditions.© 1995 American Institute of Physics.

引用

页码：1092 / 1094

页数：3

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