AES OBSERVATION ON THE PHOTOCHEMICALLY WASHED SURFACE OF GAAS

被引：4

作者：

OIGAWA, H

FAN, JF

NANNICHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 04期

关键词：

D O I：

10.1143/JJAP.28.L525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L525 / L527

页数：3

共 17 条

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[7] THE EFFECT OF (NH4)2S TREATMENT ON THE INTERFACE CHARACTERISTICS OF GAAS MIS STRUCTURES [J].

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