DIFFUSION MECHANISMS AND SUPERLATTICE DISORDERING IN GAAS

被引:77
作者
TAN, TY
GOSELE, U
机构
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1988年 / 1卷 / 01期
关键词
D O I
10.1016/0921-5107(88)90030-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:47 / 65
页数:19
相关论文
共 77 条
[1]   DIFFUSION OF SILICON IN GALLIUM ARSENIDE [J].
ANTELL, GR .
SOLID-STATE ELECTRONICS, 1965, 8 (12) :943-&
[2]   DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS [J].
ANTONIADIS, DA ;
MOSKOWITZ, I .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6788-6796
[3]   FORMATION OF GALLIUM INTERSTITIALS DURING ZINC DIFFUSION INTO GALLIUM-ARSENIDE [J].
BALL, RK ;
HUTCHINSON, PW ;
DOBSON, PS .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (05) :1299-1314
[4]   IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J].
CAMRAS, MD ;
HOLONYAK, N ;
HESS, K ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :185-187
[5]  
Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351
[6]   KINETICS OF IMPLANTATION ENHANCED INTERDIFFUSION OF GA AND AL AT GAAS-GAXAL1-XAS INTERFACES [J].
CIBERT, J ;
PETROFF, PM ;
WERDER, DJ ;
PEARTON, SJ ;
GOSSARD, AC ;
ENGLISH, JH .
APPLIED PHYSICS LETTERS, 1986, 49 (04) :223-225
[7]   DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].
COLEMAN, JJ ;
DAPKUS, PD ;
KIRKPATRICK, CG ;
CAMRAS, MD ;
HOLONYAK, N .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906
[8]  
Corbett J. W., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P1
[9]  
COTTRILL RMJ, 1965, LATTICE DEFECTS QUEN
[10]  
COWERN NEB, 1988, IN PRESS APPL PHYS L