学术探索
学术期刊
新闻热点
数据分析
智能评审

DEPTH DISTRIBUTIONS OF SULFUR IMPLANTED INTO SILICON AS A FUNCTION OF ION ENERGY, ION FLUENCE, AND ANNEAL TEMPERATURE

被引：17
作者：
WILSON, RG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期
关键词：
D O I：
10.1063/1.332936
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3490 / 3494
页数：5
相关论文
共 6 条
[1]   DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES [J].
FAHRNER, W ;
GOETZBERGER, A .
APPLIED PHYSICS LETTERS, 1972, 21 (07) :329-+
[2]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[3]   ENERGY-LEVELS AND DEFECT SIGNATURE OF SULFUR-IMPLANTED SILICON BY THERMALLY STIMULATED MEASUREMENTS [J].
KOYAMA, RY ;
PHILLIPS, WE ;
MYERS, DR ;
LIU, YM ;
DIETRICH, HB .
SOLID-STATE ELECTRONICS, 1978, 21 (07) :953-955
[4]   SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].
TRUMBORE, FA .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233
[5]   THE PEARSON-IV DISTRIBUTION AND ITS APPLICATION TO ION-IMPLANTED DEPTH PROFILES [J].
WILSON, RG .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 46 (3-4) :141-147
[6]   CORRELATION AMONG SECONDARY ION MASS-SPECTROMETRY, CROSS-SECTION TRANSMISSION ELECTRON-MICROSCOPY, AND RUTHERFORD BACKSCATTERING ANALYSES FOR DEFECT DENSITY AND DEPTH DISTRIBUTION DETERMINATION [J].
WILSON, RG ;
SADANA, DK ;
SIGMON, TW ;
EVANS, CA .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :549-551
1