RECOMBINATION-CURRENT SUPPRESSION IN GAAS P-N-JUNCTIONS GROWN ON ALGAAS BUFFER LAYERS BY MOLECULAR-BEAM EPITAXY

被引：3

作者：

RANCOUR, DP

MELLOCH, MR

PIERRET, RF

LUNDSTROM, MS

KLAUSMEIERBROWN, ME

KYONO, CS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1539 / 1541

页数：3

共 14 条

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