FABRICATION AND CHARACTERIZATION OF QUANTUM WELL WIRES GROWN ON CORRUGATED GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

KOJIMA, K

MITSUNAGA, K

KYUMA, K

机构：

[1] Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single quantum wells were grown on GaAs triangular gratings by molecular beam epitaxy. Cross-sectional transmission electron microscopy revealed that the quantum wells had a triangular shape above the ridge of the grating. The photoluminescence spectra at 77 K showed strong anisotropy, indicating that the electrons are confined two dimensionally. The calculation confirmed that the electrons tend to be localized at the corner of the bent quantum well wires, and the effective width of the quantum well wire was estimated to be 30 nm.

引用

页码：154 / 156

页数：3

共 18 条

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