NEAR-EQUILIBRIUM LPE GROWTH OF IN1-XGAXASYP1-Y LATTICE MATCHED TO INP

被引：7

作者：

KAZARINOV, RF ^{[1
]}

NORDLAND, WA ^{[1
]}

WAGNER, WR ^{[1
]}

TEMKIN, H ^{[1
]}

MANCHON, DD ^{[1
]}

机构：

[1] BELL TEL LABS INC,READING,PA 19604

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 60卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90094-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：235 / 238

页数：4

共 8 条

[1] PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH [J].

ANTYPAS, GA .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :64-65

[2] 1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].

ARAI, S ;

SUEMATSU, Y ;

ITAYA, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205

[3] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ ;

ROSSI, JA ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711

[4] NEAR-EQUILIBRIUM LPE GROWTH OF LOW THRESHOLD CURRENT-DENSITY IN 1-XGAXASYP1-Y (LAMBDA = 1.35-MU) DH LASERS [J].

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :654-656

[5] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J].

OE, K ;

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2003-2004

[6] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

[7] GROWTH OF LATTICE-MATCHED INGAASP-INP DOUBLE-HETEROSTRUCTURES BY 2-PHASE SUPERCOOLED SOLUTION TECHNIQUE [J].

SAKAI, K ;

AKIBA, S ;

YAMAMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (11) :2043-2044

[8] GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS [J].

SANKARAN, R ;

ANTYPAS, GA ;

MOON, RL ;

ESCHER, JS ;

JAMES, LW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :932-937

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