ELECTRONIC-STRUCTURE OF OXYGEN IN SILICON

被引：6

作者：

CALDAS, MJ

LEITE, JR

FAZZIO, A

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90235-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：106 / 111

页数：6

共 18 条

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[3] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON
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[5] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER
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[7] ELECTRONIC-STRUCTURE OF NEUTRAL AND NEGATIVELY CHARGED GALLIUM VACANCIES IN GAP
FAZZIO, A
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LEITE, JR
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (02): : L1 - L3
[8] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE
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[9] FAZZIO A, 1979, INT J QUANTUM CHEM, V13, P349
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