X-ray reciprocal space mapping of Si/Si1-xCex heterostructures

被引：39

作者：

Bauer, G

Li, JH

Koppensteiner, E

机构：

[1] Institut für Halbleiterphysik, Johannes Kepler Universität Linz

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)00372-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The analysis of composition, strain, and strain relaxation in molecular beam epitaxy grown Si/SiGe structures is described, based on the use of reciprocal space mapping techniques employing high resolution triple axis X-ray diffractometry.

引用

页码：61 / 67

页数：7

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