INDIRECT EXCITON ABSORPTION IN GERMANIUM

被引：21

作者：

NISHINO, T ^{[1
]}

TAKEDA, M ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN SCI, TOYONAKA 560, OSAKA, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1974年 / 37卷 / 04期

关键词：

D O I：

10.1143/JPSJ.37.1016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1016 / 1023

页数：8

共 24 条

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[19]

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[20] EXCITON ENERGY LEVELS IN GERMANIUM AND SILICON [J].

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