HIGH MAGNETIC-FIELD CHARACTERIZATION OF MOCVD HETEROSTRUCTURES AND SUPERLATTICES

被引：4

作者：

NICHOLAS, RJ

BRUMMEL, MA

PORTAL, JC

机构：

[1] UNIV OXFORD, CLARENDON LAB, OXFORD, ENGLAND

[2] INST NATL SCI APPL LYON, PHYS SOLIDES LAB, F-31077 TOULOUSE, FRANCE

[3] CNRS, SNCI, F-38042 GRENOBLE, FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-0248(84)90437-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：356 / 369

页数：14

共 50 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY [J].

ANDO, T .

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[2] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J].

ANDO, T .

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[3] AN ACCURATE METHOD TO CHECK CHEMICAL INTERFACES OF EPITAXIAL III-V-COMPOUNDS [J].

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[4] LOW-TEMPERATURE INVESTIGATIONS OF THE QUANTUM HALL-EFFECT IN INXGA1-XAS-INP HETEROJUNCTIONS [J].

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[5] TWO-DIMENSIONAL MAGNETOPHONON RESONANCE .2. GAINAS-ALINAS HETEROJUNCTIONS [J].

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CHO, AY .

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[6] TWO-DIMENSIONAL MAGNETOPHONON RESONANCE IN GAINAS-INP SUPER-LATTICES [J].

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[7] CYCLOTRON-RESONANCE AND POLARON EFFECTS IN A TWO-DIMENSIONAL ELECTRON-GAS IN GAINAS [J].

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RAZEGHI, M ;

DIFORTEPOISSON, MA ;

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[8] ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[9] HETEROJUNCTION-INDUCED PHENOMENA IN HALL-EFFECT AND PHOTOCONDUCTIVITY MEASUREMENTS OF EPITAXIAL ALXGA1-XAS [J].

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[10] POLARON EFFECTIVE MASS IN GAAS HETEROSTRUCTURE [J].

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