DOPANT AND DEFECT STATES IN A-SI-H

[1] BIEGELSEN DK, 1984, AIP C P, V120, P32

[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[3] TEMPERATURE-DEPENDENCE OF ELECTRON-SPIN-RESONANCE SPECTRA OF DOPED A-SI-H [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (01): : 307 - 317

[4] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[5] ENERGY-DEPENDENCE OF THE CARRIER MOBILITY-LIFETIME PRODUCT IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4861 - 4871

[6] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5187 - 5198

[7] THE CORRELATION-ENERGY OF THE DANGLING SILICON BOND IN A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (04) : 477 - 480

[8] IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4066 - 4069

[9] MEASUREMENT OF DEEP LEVELS IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT VOLTAGE SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 981 - 983

[10] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507

[1] BIEGELSEN DK, 1984, AIP C P, V120, P32

[2] IDENTIFICATION OF THE DANGLING-BOND STATE WITHIN THE MOBILITY GAP OF ALPHA-SI-H BY DEPLETION-WIDTH-MODULATED ELECTRON-SPIN-RESONANCE SPECTROSCOPY [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (02) : 109 - 112

[3] TEMPERATURE-DEPENDENCE OF ELECTRON-SPIN-RESONANCE SPECTRA OF DOPED A-SI-H [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (01): : 307 - 317

[4] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562

[5] ENERGY-DEPENDENCE OF THE CARRIER MOBILITY-LIFETIME PRODUCT IN HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4861 - 4871

[6] ENERGY-DEPENDENCE OF THE OPTICAL MATRIX ELEMENT IN HYDROGENATED AMORPHOUS AND CRYSTALLINE SILICON [J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5187 - 5198

[7] THE CORRELATION-ENERGY OF THE DANGLING SILICON BOND IN A-SI-H [J]. SOLID STATE COMMUNICATIONS, 1982, 44 (04) : 477 - 480

[8] IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4066 - 4069

[9] MEASUREMENT OF DEEP LEVELS IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT VOLTAGE SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 981 - 983

[10] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507