DEFECT-FREE EPITAXIAL LATERAL OVERGROWTH OF OXIDIZED (111)SI BY LIQUID-PHASE EPITAXY

We report on epitaxial lateral overgrowth of Si on oxidized (111) Si wafers by liquid phase epitaxy. The growth starts in oxide-free seeding windows and proceeds laterally over the SiO2. Growth effectively ceases when (111) sidewalls form. This observation allows the development of a geometrical model that, for the first time, explains the observed dependence of the overgrowth width on the orientation of the seeding windows. We obtain a maximum overgrowth width of 120-130 μm and a maximum aspect ratio of 40:1. Transmission electron microscopy reveals no crystallographic defects in the overgrown lamellae.