FABRICATION OF LATERAL DOPING PROFILES BY A COMPUTER-CONTROLLED FOCUSED ION-BEAM

被引:6
作者
SELIGER, RL [1 ]
WARD, JW [1 ]
机构
[1] HUGHES RES LABS,MALIBU,CA 90265
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 06期
关键词
D O I
10.1116/1.568546
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1378 / 1381
页数:4
相关论文
共 6 条
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BROERS AN, 1972, ELECTRON ION BEAM SC, P15
[2]  
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[3]   GAAS FIELD-EFFECT TRANSISTORS WITH ION-IMPLANTED CHANNELS [J].
HUNSPERGER, RG ;
HIRSCH, N .
ELECTRONICS LETTERS, 1973, 9 (25) :577-578
[4]  
PRUNIAUX BR, 1971, 11TH P INT C ION IMP
[5]   FOCUSED ION-BEAMS IN MICROFABRICATION [J].
SELIGER, RL ;
FLEMING, WP .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1416-1422
[6]  
YAMAGUCHI T, 1974, P INT ELECTRON DEVIC, P537