LOW-ENERGY HYDROGEN-ION BOMBARDMENT DAMAGE IN SILICON - AN INSITU OPTICAL INVESTIGATION

[1] Aspnes D. E., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V276, P188

[2] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1984, 29 (02): : 768 - 779

[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009

[4] ASPNES DE, 1983, P SOC PHOTO OPT INST, V452, P61

[5] AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P332

[6] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 670 - 671

[7] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J]. ANNALEN DER PHYSIK, 1935, 24 (07) : 636 - 664

[8] Collins R. W., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V617, P62, DOI 10.1117/12.961074

[9] STRUCTURAL STUDIES OF HYDROGEN-BOMBARDED SILICON USING ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (02): : 153 - 158

[10] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 618 - 620

[1] Aspnes D. E., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V276, P188

[2] DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1984, 29 (02): : 768 - 779

[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009

[4] ASPNES DE, 1983, P SOC PHOTO OPT INST, V452, P61

[5] AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P332

[6] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 670 - 671

[7] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J]. ANNALEN DER PHYSIK, 1935, 24 (07) : 636 - 664

[8] Collins R. W., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V617, P62, DOI 10.1117/12.961074

[9] STRUCTURAL STUDIES OF HYDROGEN-BOMBARDED SILICON USING ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (02): : 153 - 158

[10] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 618 - 620