PHYSICAL LIMITS TO VLSI TECHNOLOGY USING SILICON MOSFETS

被引：5

作者：

DENNARD, RH

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90436-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：39 / 43

页数：5

共 14 条

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DENNARD, RH ;

GAENSSLEN, FH ;

WALKER, EJ ;

COOK, PW .

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[5]

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[6]

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[7] VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].

GAENSSLEN, FH ;

RIDEOUT, VL ;

WALKER, EJ ;

WALKER, JJ .

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[8]

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[9] EFFECT OF RANDOMNESS IN DISTRIBUTION OF IMPURITY IONS ON FET THRESHOLDS IN INTEGRATED ELECTRONICS [J].

KEYES, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) :245-247

[10]

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