PROCESSING OF TITANIUM FILMS ON SILICON USING A MULTISCANNED ELECTRON-BEAM

被引：12

作者：

MAYDELLONDRUSZ, EA ^{[1
]}

HEMMENT, PLF ^{[1
]}

STEPHENS, KG ^{[1
]}

MOFFAT, S ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 17期

关键词：

D O I：

10.1049/el:19820509

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：752 / 754

页数：3

共 9 条

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ANDERSON, R ;

BAGLIN, J ;

DEMPSEY, J ;

HAMMER, W ;

DHEURLE, F ;

PETERSSON, S .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :285-287

[2] TITANIUM AND NICKEL SILICIDE FORMATION AFTER Q-SWITCHED LASER AND MULTI-SCANNING ELECTRON-BEAM IRRADIATION [J].

BENTINI, GG ;

SERVIDORI, M ;

COHEN, C ;

NIPOTI, R ;

DRIGO, AV .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1525-1531

[3]

JOSHI A, 1975, METHODS SURFACE ANAL

[4]

MEYER O, 1976, ION BEAM SURFACE LAY

[5]

PINIZOTTO RF, 1981, 4TH P INT S SIL MAT, V81, P562

[6]

SAMSONOV GG, 1964, PLENUM HDB HIGH TEMP, P373

[7] REFRACTORY-METAL SILICIDES FOR VLSI APPLICATIONS [J].

SINHA, AK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :778-785

[8]

Tu K. N., 1978, THIN FILMS INTERDIFF

[9]

WANG KL, 1981, P INT ELECTRONIC DEV

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