TUNNEL-INJECTION LUMINESCENCE IN SEMICONDUCTING DIAMOND

被引：1

作者：

LEPEK, A ^{[1
]}

HALPERIN, A ^{[1
]}

LEVINSON, J ^{[1
]}

机构：

[1] HEBREW INST RACAH INST PHYS,JERUSALEM,ISRAEL

来源：

JOURNAL OF LUMINESCENCE | 1976年 / 12卷 / 01期

关键词：

D O I：

10.1016/0022-2313(76)90195-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：897 / 901

页数：5

共 8 条

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[3]

Esaki L., 1969, Tunneling phenomena in solids, P47

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[5] FERMI LEVEL POSITION AT METAL-SEMICONDUCTOR INTERFACES [J].

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SPITZER, WG .

PHYSICAL REVIEW, 1964, 134 (3A) :A713-+

[6] BAND STRUCTURE AND OPTICAL PROPERTIES OF DIAMOND [J].

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BERGSTRESSER, TK ;

COHEN, ML .

PHYSICAL REVIEW LETTERS, 1966, 16 (09) :354-+

[7]

Wight D. R., 1971, Journal of Luminescence, V4, P169, DOI 10.1016/0022-2313(71)90071-8

[8]

Williams R., 1970, SEMICONDUCT SEMIMET, V6, P97

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