THRESHOLD VOLTAGE IN SHORT-CHANNEL MOS DEVICES

被引：22

作者：

VISWANATHAN, CR ^{[1
]}

BURKEY, BC ^{[1
]}

LUBBERTS, G ^{[1
]}

TREDWELL, TJ ^{[1
]}

机构：

[1] EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 05期

关键词：

D O I：

10.1109/T-ED.1985.22050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：932 / 940

页数：9

相关论文

共 6 条

[1] THRESHOLD VOLTAGE MODELS OF SHORT, NARROW AND SMALL GEOMETRY MOSFETS - A REVIEW
AKERS, LA
SANCHEZ, JJ
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 621 - 641
[2] CHANNEL POTENTIAL AND CHANNEL WIDTH IN NARROW BURIED-CHANNEL MOSFETS
BURKEY, BC
LUBBERTS, G
TRABKA, EA
TREDWELL, TJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 423 - 429
[3] RICE JR, 1977, MATH SOFTWARE, V3, P319
[4] SUB-THRESHOLD CONDUCTION IN MOSFETS
TAYLOR, GW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 337 - 350
[5] EFFECTS OF 2-DIMENSIONAL CHARGE SHARING ON THE ABOVE-THRESHOLD CHARACTERISTICS OF SHORT-CHANNEL IGFETS
TAYLOR, GW
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (08) : 701 - 717
[6] YAO LD, 1974, SOLID ST ELECTRON, V17, P1059