HYDROGEN PASSIVATION OF LASER-INDUCED DEFECTS IN GERMANIUM

被引：7

作者：

PEARTON, SJ

TAVENDALE, AJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 01期

关键词：

D O I：

10.1063/1.331678

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：440 / 441

页数：2

共 13 条

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LEAMY, HJ .

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[2]

BENTON JL, 1980, LASER ELECTRON BEAM, P430

[3]

CULLIS AG, 1979, J PHYS E, V12, P689

[4]

KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

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[6] DEFECTS IN LASER DAMAGED SILICON OBSERVED BY DLTS [J].

MOONEY, PM ;

YOUNG, RT ;

KARINS, J ;

LEE, YH ;

CORBETT, JW .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (01) :K31-K34

[7] HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON [J].

PANKOVE, JI ;

LAMPERT, MA ;

TARNG, ML .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :439-441

[8] PHOTO-LUMINESCENCE RECOVERY IN RE-HYDROGENATED AMORPHOUS SILICON [J].

PANKOVE, JI .

APPLIED PHYSICS LETTERS, 1978, 32 (12) :812-813

[9]

PANKOVE JI, 1979, APPL PHYS LETT, V34, P157

[10] HYDROGEN PASSIVATION OF COPPER-RELATED DEFECTS IN GERMANIUM [J].

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :253-255

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