NOISE-REDUCTION IN GAAS SCHOTTKY-BARRIER MIXER DIODES

被引：4

作者：

KATTMANN, KM

CROWE, TW

MATTAUCH, RJ

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1987年 / 35卷 / 02期

关键词：

D O I：

10.1109/TMTT.1987.1133627

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：212 / 214

页数：3

共 13 条

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[7] CHARACTERISTICS OF SCHOTTKY DIODES WITH MICROCLUSTER INTERFACE [J].

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[9] INTERFACIAL STRESS AND EXCESS NOISE IN SCHOTTKY-BARRIER MIXER DIODES [J].

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[10]

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