DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAPS ON GATE ELECTRODE MATERIAL IN METAL SIO2/SI DEVICES

被引：23

作者：

ZEKERIYA, V

MA, TP

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 01期

关键词：

D O I：

10.1063/1.96402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：54 / 56

页数：3

共 18 条

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