EXPERIMENTAL-STUDY ON THE ER/P-INP SCHOTTKY-BARRIER

Rare-earth element Er was deposited onto (100) oriented Zn-doped p-type InP to form Schottky barriers. The Er/p-InP Schottky barrier have been studied by current-voltage (I-V), temperature dependence of current-voltage (I-V-T), and capacitance-voltage (C-V) methods and Schottky barrier heights (SBHs) measured by I-V and I-V-T methods are in the range 0.83-0.87 eV, while SBHs measured by the C-V method are in the range 0.98-1.06 eV. Ideality factor n and series resistances R are in the range 1.08-1.11 and 30-50 Ω, respectively. Combining the experimental results of SBHs reported in the literature for Schottky barriers with various metals on p-InP (100), we conclude the Fermi level pinning for InP with (100) orientation is much stronger than that for Si or GaAs. © 1995 American Institute of Physics.