OPTICALLY-EXCITED MINORITY-ELECTRON VELOCITY IN SELECTIVELY BE-DOPED ALGAAS/GAAS/ALGAAS SINGLE QUANTUM-WELLS

被引：5

作者：

SHIGEKAWA, N

FURUTA, T

MAEZAWA, K

MIZUTANI, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 12期

关键词：

D O I：

10.1063/1.102545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The minority-electron velocity versus electric field (v-E) relationship was measured for selectively Be-doped Al0.5Ga0.5As/GaAs/ Al0.5Ga0.5As single quantum wells with different well-layer thicknesses by means of the time-of-flight (TOF) method at room temperature. It was found that the electron drift velocity for the 200-Å-thick quantum well is suppressed in comparison with those for the 600-Å-thick and 2000-Å-thick wells. This suppression is successfully explained by considering that the electron-hole interaction is enhanced in narrower wells due to a larger overlap of the wave functions of electrons and holes.

引用

页码：1146 / 1148

页数：3

共 9 条

[1] THE DIELECTRIC FUNCTION OF HOLES IN SEMICONDUCTORS OF ZINCBLENDE STRUCTURE [J].