QUANTITATIVE-DETERMINATION OF THE RECOMBINING ACTIVITIES OF 60-DEGREES AND SCREW DISLOCATIONS IN FLOAT ZONE AND CZOCHRALSKI-GROWN SILICON

We have characterized quantitatively the recombining activities of 60-degrees and screw dislocations by their recombination velocities. This parameter was derived from the diffusion length determined by using the surface photovoltage method. Dislocations were introduced in initially perfect float zone and Czochralski-grown crystals, at different temperatures. The results show that 60-degrees dislocations are much more active than screws, and that the activity increases markedly with oxygen content of the material and with the temperature at which dislocations were introduced.