COMPOSITIONAL VARIATIONS OF POROUS SILICON LAYERS PRIOR TO AND DURING ION-BEAM ANALYSES

被引：20

作者：

LONI, A ^{[1
]}

SIMONS, AJ ^{[1
]}

CANHAM, LT ^{[1
]}

PHILLIPS, HJ ^{[1
]}

EARWAKER, LG ^{[1
]}

机构：

[1] UNIV BIRMINGHAM,SCH PHYS & SPACE RES,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 05期

关键词：

D O I：

10.1063/1.357517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The suitability of ion-beam-analysis techniques in quantifying the composition of mesoporous silicon nanostructures has been critically examined using films of moderate porosity (55%) prepared on n+ substrates. The effects of room-temperature aging of as-etched and thermally oxidized porous silicon, the oxidation conditions chosen to render the material luminescent, have been carefully monitored, as have the effects of both ion-beam irradiation and storage of samples in vacuo. It is shown that the concentrations of the three major impurities oxygen, carbon, and hydrogen can be appreciably altered during analyses, thereby limiting the reliability of the techniques, as conventionally applied to porous silicon. The use of appropriate capping layers, which should alleviate the problem, is recommended.

引用

页码：2825 / 2832

页数：8

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